PART |
Description |
Maker |
HY51V65173HGJT |
4Mx16|3.3V|4K|6|FP/EDO DRAM - 64M 4Mx16 | 3.3 | 4K的| 6 |计划生育/ EDO公司的DRAM - 6400
|
Citizen Finetech Miyota
|
K5T6432YT K5T6432YTM-T310 |
64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HY5DV641622AT-4 HY5DV641622AT-33 HY5DV641622AT-36 |
64M(4Mx16) DDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
CMS6416LAX-75XX |
64M(4Mx16) Low Power SDRAM
|
FIDELIX
|
SDC1740 SDC1740411B SDC1740412B SDC1740413B SDC174 |
INDUCTOR,2.2UH, 20%, 71.2M OHM MAX DRC, 1.75A IRMS SYNCHRO OR RESOLVER TO DIGITAL CONVERTER, MDIP32 12- and 14-Bit Hybrid Synchro/ Resolver-to-Digital Converters SYNCHRO OR RESOLVER TO DIGITAL CONVERTER, MDIP32 12- and 14-Bit Hybrid Synchro/ Resolver-to-Digital Converters 12 -14位混合同分解到数字转换器
|
ANALOG DEVICES INC Analog Devices, Inc. AD[Analog Devices]
|
HY5DV641622AT-5 |
64M(4Mx16) DDR SDRAM 4M X 16 DDR DRAM, 0.5 ns, PDSO66
|
Hynix Semiconductor, Inc.
|
SDC1740 SDC1741 RDC1740 |
14-Bit Synchro-to-Digital Converter 12-Bit Synchro-to-Digital Converter 14-Bit Hybrid Synchro/Resolver-to-Digital Converter
|
Analog Devices
|
SST39VF1602 SST39VF6402 SST39VF3201 SST39VF3202 |
(SST39VFxx0x) 16M-Bit / 32M-Bit / 64M-Bit Multi-Purpose Flash Plus
|
Silicon Storage Technology
|
MX26L6420XAI-12 MX26L6420MI-90 MX26L6420TI-90 MX26 |
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM MICA RoHS Compliant: No 64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM 4M X 16 FLASH 3V PROM, 120 ns, PDSO44
|
Macronix International Co., Ltd. http://
|